Published October 2012 | Version v1
Journal article

Finite element simulation of the effect of electric boundary conditions on the spherical indentation of transversely isotropic piezoelectric films

  • 1. Materials Program, Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506 (United States)

Description

Finite element simulation was used to analyze the effect of electric boundary conditions on the indentation deformation of a transversely isotropic piezoelectric film with the contact radius much larger than the film thickness. Six different combinations of electric boundary conditions were used. The simulation results showed that the indentation load is proportional to the square of the indentation depth and the indentation-induced electric potential at the contact center is a linear function of the ratio of the indentation depth to the film thickness for all six cases. The contact stiffness is proportional to the contact area and inversely proportional to the film thickness. The nominal piezoelectric charge coefficient d33 is inversely proportional to the derivative of the electric potential with respect to the indentation depth for the indentation of a piezoelectric film by a conducting indenter with a grounded, rigid substrate. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0964-1726/21/10/105020

Additional details

Publishing Information

Journal Title
Smart Materials and Structures (Print)
Journal Volume
21
Journal Issue
10
Journal Page Range
[10 p.]
ISSN
0964-1726

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44126771
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BOUNDARY CONDITIONS; DEFORMATION; ELECTRIC POTENTIAL; FILMS; FINITE ELEMENT METHOD; FLEXIBILITY; PIEZOELECTRICITY; SIMULATION; SUBSTRATES; THICKNESS
Descriptors DEC
CALCULATION METHODS; DIMENSIONS; ELECTRICITY; MATHEMATICAL SOLUTIONS; MECHANICAL PROPERTIES; NUMERICAL SOLUTION; TENSILE PROPERTIES