Published July 28, 2014 | Version v1
Journal article

Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene

  • 1. NOVITAS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
  • 2. Institute of Nanosurface Science and Engineering, Shenzhen University, Shenzhen 518060 (China)

Description

In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
4
Journal Page Range
p. 042402-042402.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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