Published 2005
| Version v1
Journal article
Deposition of Si and Ho ions in GaAs/AlxGa1-xAs heterostructures by means of focusing ion implantation
- 1. Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Univ. Bochum, Bochum (Germany)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Deposition von Si- und Ho-ionen in GaAs/Al
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 269
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36046237
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ALUMINIUM ARSENIDES; BEAM TRANSPORT; CRYSTAL DOPING; DOPED MATERIALS; EV RANGE 10-100; FOCUSING; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOLMIUM IONS; ION IMPLANTATION; MAGNETORESISTANCE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON 28 BEAMS; SILICON IONS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EMISSION; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; ION BEAMS; IONS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS