Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)

Utilizing the naturally curved surface contours provided by oval defects on a GaAs(100) surface, we demonstrate that alignment of quantum-dot chains formed during the growth of (In,Ga)As multilayers is unyielding to a modest deviation of surface orientation from (100) of about 0.7 deg. along [01-1] and 8 deg. along [011]. This finding suggests that the strain-driven kinetic anisotropy responsible for the formation of the quantum dot chains dominates over selective island formation at steps due to surface misorientation. The robustness of the quantum dot chain adds to its potential for its future application