Published May 1997
| Version v1
Journal article
Study of multilayer GaAs-InxGa1-xAs layers-based structure by double-crystal x-ray diffractometry
Creators
- 1. RAN, Fiziko-Tekhnologicheskij Inst., Moscow (Russian Federation)
- 2. Rossijskij Nauchnyj Tsentr Kurchatovskij Inst., Moscow (Russian Federation)
- 3. RAN, Inst. Kristallografii, Moscow (Russian Federation)
- 4. RAN, Inst. Radiotekhniki i Ehlektroniki, Moscow (Russian Federation)
Description
Possibilities of x-ray diffraction method in determining parameters of separate layers and interfaces of multilayers structures were investigated taking InxGa1-xAs/GaAs system as an example. To provide high resolution reflection curves were measured in wide angular range of more than 8000 angular seconds. The adjustment procedure was developed on the basis of χ2 method. The method enables to determine the structure of interfaces with the the maximal resolution. Satisfactory agreement of experimental was demonstrated. It was established that layer interfaces appeared to be more diffused, than it was proposed according to growth technology
Abstract (Russian)
Исследованы возможности рентгенодиффракционного метода в определении параметров отдельных слоев и границ раздела многослойных структур на примере системы InxGa1-xAs/GaAs. С целью обеспечения высокого разрешения кривые отражения измерялись в широком угловом интервале более 8000 угловых секунд. На основе метода χ2 отработана процедура подгонки. Метод дает возможность определять структуру границ раздела с максимаьно возможным разрешением. Продемонстрировано хорошее согласие экспериментальной и расчетной кривых и установлено, что границы раздела между слоями оказались более размытыми, чем это предполагалось по технологии ростаAdditional details
Additional titles
- Original title (Russian)
- Исследование многослойных структур на основе слоев GaAs-Ин
Publishing Information
- Journal Title
- Kristallografiya
- Journal Volume
- 42
- Journal Issue
- 3
- Journal Page Range
- p. 514-523
- ISSN
- 0023-4761
- CODEN
- KRISAJ
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 31064887
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ERRORS; GALLIUM ARSENIDES; INDIUM ARSENIDES; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES; SCATTERING
Optional Information
- Notes
- 22 refs., 6 figs., 1 tab.