Published September 1999 | Version v1
Journal article Metadata-only

Thermal diffusion and trapping of hydrogen into Si-implanted Al

Creators

  • 1. Dept. of Nuclear Engineering, Kyoto Univ., Kyoto (Japan)

Description

We have measured the hydrogen behavior in aluminum specimens containing a thin Al-Si alloy layer that was formed by implanting 78-keV silicon ions. 30-keV hydrogen ions were implanted into the pure aluminum region beyond the Al/Si alloy layer at 300 K. After the hydrogen implantation, we have measured the depth profile and thermal behavior of hydrogen in the sample by the ERD method. It was found that the bubble hydrogen formation is a main trapping mechanism in the sample of 1 x 1017 H/cm2. (author)

Additional details

Publishing Information

Journal Title
Annual Report of Quantum Science and Engineering Center
Journal Volume
1
Journal Page Range
p. 7-9
ISSN
1345-0700

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
31006582
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; ALUMINIUM ALLOYS; COCKCROFT-WALTON ACCELERATORS; DEPTH; HYDROGEN; ION IMPLANTATION; SILICON IONS; TEMPERATURE DEPENDENCE; THERMAL DIFFUSION; TRAPPING; VAN DE GRAAFF ACCELERATORS
Descriptors DEC
ACCELERATORS; ALLOYS; CHARGED PARTICLES; DIFFUSION; DIMENSIONS; ELECTROSTATIC ACCELERATORS; ELEMENTS; IONS; METALS; NONMETALS