Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond
Creators
- 1. Stanford University, Stanford, CA (United States)
- 2. Harvard University, Cambridge, MA (United States)
Description
Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.
Availability note (English)
Available from https://www.osti.gov/servlets/purl/1457052; https://www.osti.gov/biblio/1457052; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- Nano Letters
- Journal Volume
- 18
- Journal Issue
- 2
- Journal Page Range
- p. 1360-1365
- ISSN
- 1530-6984
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 50069112
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COLOR CENTERS; DIAMONDS; EMISSION; EXCITED STATES; QUANTUM COMPUTERS; QUANTUM ENTANGLEMENT; QUANTUM OPTICS; SILICON; STRONG-COUPLING MODEL
- Descriptors DEC
- CARBON; COMPUTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; MATHEMATICAL MODELS; MINERALS; NONMETALS; OPTICS; PARTICLE MODELS; POINT DEFECTS; SEMIMETALS; VACANCIES
Optional Information
- Contract/Grant/Project number
- EFRI-5710004174; W911NF1310309; N00014-15-1-2761; AC02-76SF00515
- Funding organization
- USDOE (United States)
- Secondary number(s)
- OSTIID--1457052