Published July 1991 | Version v1
Journal article

Effect of hydrogen ion bombardment on the characteristics of TiC films formed by the ion beam sputtering method

  • 1. Hitachi Koki Co. Ltd., Ibaraki (Japan)

Description

TiC films were prepared by a dual ion beam sputtering apparatus using combined targets of titanium and graphite. Some of the films were bombarded by hydrogen ions with an energy range of 5-10 keV during deposition. The microhardness of the TiC films was measured by a Knoop hardness tester. Films experiencing hydrogen ion bombardment were 1.5 times harder than films without the bombardment. The atomic composition and the chemical bonding states of the films were analyzed by Auger electron spectroscopy and X-ray photoelectron spectroscopy. Two types of carbon, carbidelike and graphitelike, were observed in the TiC film. In the films with hydrogen ion bombardment, the increased film hardness was attributed to the dominant formation of carbidelike carbon. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research, Section B
Journal Volume
59/60
Journal Issue
pt.2
Series
Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
798-801
ISSN
0168-583X
CODEN
NIMBE

Conference

Title
7. international conference on ion beam modification of materials (IBMM-7) and exposition.
Dates
9-14 Sep 1990.
Place
Knoxville, TN (United States).