Published January 1989 | Version v1
Journal article Metadata-only

Reflectivity dependence of threshold current in GaInAsP/InP surface emitting laser

Creators

  • 1. Tokyo Institute of Technology, Research Lab. of PME, Nagatsuta, Midori-ku, Yokohama (Japan)

Description

The authors have made a systematic study on changing the reflectivity of Si/SiO/sub 2/ mirror for 1.3 μm GaInAsP/InP surface emitting lasers. The effective threshold current of 4.5 mA at 77K continuous operation has been obtained. This indicates a possibility of a sub-mA threshold at 77K and ≥20m at 300K by optimizing the mirror reflectivity

Additional details

Publishing Information

Journal Title
IEEE Photonics Technology Letters
Journal Volume
1
Journal Issue
1
Series
IEEE Photonics Technol. Lett.
Journal Page Range
11-13
ISSN
1041-1135
CODEN
IPTLE

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20063396
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LASER MIRRORS; MATERIALS; OPTIMIZATION; REFLECTION; SEMICONDUCTOR LASERS; SILICON OXIDES
Descriptors DEC
AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SOLID STATE LASERS