Published October 1, 2003 | Version v1
Journal article

Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes

  • 1. Dipartimento di Ingegneria Elettronica, Universita di Roma 'Tor Vergata' (Italy)
  • 2. Institut fuer Physik, Technische Universitaet Chemnitz, D-09107 Chemnitz (Germany)

Description

We have investigated electronic transport in hybrid organic/inorganic Schottky diodes. In order to derive from basic principles the transport properties of the organic semiconductors, we have use a two-dimensional drift-diffusion simulator which properly accounts for transport in both organic and inorganic layers. We have calculated the I-V characteristics of Ag/PTCDA/GaAs Schottky diodes as a function of PTCDA thickness and compared the results with experimental in situ measurements. The interplay between barrier height, PTCDA thickness, space-charge-limited current, and image charge is outlined

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/15/S2719/cm3_38_010.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
15
Journal Issue
38
Journal Page Range
p. S2719-S2728
ISSN
0953-8984
CODEN
JCOMEL