Neutron degradation of the I-V characteristics of AlGaAs/GaAs modulation-doped field-effect transistors

This paper reports on AlGaAs/GaAs MODFET's neutron irradiated to fluences approaching 1015 cm-2. The source-drain current and the transconductance degrade about 30% over this range of fluences. The source-drain resistance increases by 60% and the end resistance increased by 30% at fluences near 1015 cm-2. A triangular-well one-subband depletion layer model has been developed, which applies over the range of I-V characteristics from subthreshold to saturation. The model has been extended to describe neutron degradation of source-drain current and transconductance. Both the source-drain current and the transconductance exhibit a nonlinear dependence on neutron fluence, which is reflected in the theoretical results