The effect of mutual recombination on dislocation point defect sink strengths

The diffusion equations which describe the distribution of point defects around a line dislocation have been solved by a computer iterative technique for the case of dislocations in copper. The sink strengths have been calculated in a manner consistent with the requirements of the rate theory continuum model. When mutual recombination is negligible the appropriate analytic results are reproduced exactly. An increase in mutual recombination leads to an increase in both sink strengths and the bias parameter. An empirical relation is derived for the variation of sink strength with mutual recombination. (author)