Rapid thermal annealing of ion implanted indium phosphide

Rapid thermal annealing (RTA) of ion implanted indium phosphide has been investigated. Silicon implantations into indium phosphide were rapid thermal annealed using infrared lamps. The substrates were annealed for various times using an encapsulated method. Annealing was performed in either nitrogen or hydrogen ambients. Encapsulant-substrate interactions were examined using Auger electron spectroscopy (AES) along with a sequence of high-resolution X-ray photoelectron spectra of the interfacial region. Atomic concentration profiles of implanted silicon were investigated using secondary ion mass spectroscopy (SIMS) for various annealing conditions. The electrical properties resulting from RTA were analyzed by fabricating metal-insulator-semiconductor field-effect transistors. (MISFETs). Sheet resistivity, current voltage (IV) characteristics, and other transistor properties were observed for several device geometries. Characteristics from MISFETs were compared to previous results obtained from Schottky contacts