Published July 1996 | Version v1
Journal article Metadata-only

Study of doped InP by positron annihilation lifetime technique

Creators

  • 1. Academia Sinica, Beijing, BJ (China). Inst. of High Energy Physics
  • 2. Institute No.13 of the Ministry of Electronic Industry, Shijiazhuang (China)

Description

The variations of vacancy concentration with carrier concentration, conductivity and dislocation density were studied by the positron annihilation lifetime technique for the InP samples doped with both multi-impurities and single Sn

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
19
Journal Issue
7
Journal Page Range
p. 395-398.
ISSN
0253-3219
CODEN
NUTEDL

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
28016790
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNIHILATION; CARRIER DENSITY; CRYSTAL DOPING; DISLOCATIONS; ELECTRIC CONDUCTIVITY; INDIUM PHOSPHIDES; LIFETIME; POSITRONS; TIN; VACANCIES
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INDIUM COMPOUNDS; INTERACTIONS; LEPTONS; LINE DEFECTS; MATTER; METALS; PARTICLE INTERACTIONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS