Published 1987 | Version v1
Book

Light-induced changes in a-Si:H studied by ENDOR-detected ESR

  • 1. Electrotechnical Lab., Sakuramura, Ibaraki, Japan

Description

Highly-resolved ESR spectra including 29Si hyperfine structure were determined on undoped and P-doped a-Si:H using 1H ENDOR technique. From the comparison of the spectra of undoped a-Si:H between before and after the light soaking, spatial distribution of photo-created dangling bonds is discussed in relation with the bond-breaking model. Spin centers coupled with 31P increase in P-doped a-Si:H after the light soaking

Additional details

Publishing Information

Publisher
American Institute of Physics.
Imprint Place
New York, NY (USA)
Imprint Title
Stability of amorphous silicon alloy materials and devices
Journal Page Range
p. 9-16.

Conference

Title
International conference on stability of amorphous silicon alloy materials and devices.
Dates
28-30 Jan 1987.
Place
Palo Alto, CA (USA).