Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

A single ZnO nanowire field-effect transistor(FET) was fabricated and its current-voltage characteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, reflecting the influence of the contact barriers formed between the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.