Anomalous effect due to oxygen vacancy accumulation below the electrode in bipolar resistance switching Pt/Nb:SrTiO3 cells
Creators
- 1. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
- 2. Center for Correlated Electron Systems, Institute for Basic Science, Seoul 151-747 (Korea, Republic of)
- 3. School of Physics, Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of)
- 4. Analytical Science Group, Samsung Advanced Institute of Technology, Yongin, Gyeonggi-do 446-712 (Korea, Republic of)
- 5. Logic TD, Semiconductor R and D Center, Samsung Electronics, Hwaseong-si, Gyeonggi-do 445-701 (Korea, Republic of)
Description
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semiconductor. For the bipolar resistance switching (BRS) phenomena in oxides, the same doping principle has been used commonly to explain the relationship between the density variation of oxygen vacancies (Vo¨) and the electronic resistance. We find that the Vo¨ density can change at a depth of ∼10 nm below the Pt electrodes in Pt/Nb:SrTiO3 cells, depending on the resistance state. Using electron energy loss spectroscopy and secondary ion mass spectrometry, we found that greater Vo¨ density underneath the electrode resulted in higher resistance, contrary to the conventional doping principle of semiconductors. To explain this seemingly anomalous experimental behavior, we provide quantitative explanations on the anomalous BRS behavior by simulating the mobile Vo¨ [J. S. Lee et al., Appl. Phys. Lett. 102, 253503 (2013)] near the Schottky barrier interface
Additional details
Identifiers
- DOI
- 10.1063/1.4884215;
Publishing Information
- Journal Title
- APL Materials
- Journal Volume
- 2
- Journal Issue
- 6
- Journal Page Range
- p. 066103-066103.6
- ISSN
- 2166-532X
- CODEN
- AMPADS
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46010147
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DENSITY; ELECTRODES; ELECTRONS; ENERGY-LOSS SPECTROSCOPY; INTERFACES; MASS SPECTROSCOPY; OXYGEN; SEMICONDUCTOR MATERIALS; STRONTIUM TITANATES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTONS; MATERIALS; NONMETALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SPECTROSCOPY; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2014 Author(s)