Drift and diffusion high-field magneto-transport in GaN

The paper is focused on the investigation of magneto-transport phenomena in the compensated bulk-like GaN sample. Particularly, we studied the diffusion coefficient of the electrons in parallel and crossed configurations of moderate electric (E =1...10 kV/cm) and magnetic (H =1...4 T) fields. We found that E-field dependencies of the transverse-to-current diffusion coefficient are non-monotonic for both configurations with magnitude of the diffusion coefficient greatly controlled by the H-field. We showed that different behavior of the diffusion processes corresponds to distinct kinetics of the hot electrons. We suggest that measurements of the diffusion coefficient under E- and H-fields will allow to identify important for applications regimes of the electron kinetics. (paper)