The actions of flows of accelerated electrons in electric properties of the amorphous films of the solid solution Ge0.85Si0.15:Hx

The amorphous films of the solid solution Ge0.85Si0.15:Hx (x=1.,3; 5.1; 8.7; 14.2 and 23.7 at %) were received in atmosphere of hydrogenic environment, thickness d=1.0 μm after plasma-chemical deposition method. The rate of deposition formed 0.5 Angstrom/C. The measuring of rate conductivity (σD) of films was conducted in the temperature region 80-300 K. It was calculated the activation energy of the electrical conduction (ΔE) by the temperature 80 K, electrons mobility μC, μF at levels EC and EF are also the dense of states - N(EF) at the levels of Fermi (EF). It studied the action of flows of accelerated electrons with energy 5 MeV in the integral flow of electrons 2·1016 cm12 at electronic properties of the amorphous films Ge0.85Si0.15:Hx . Irradiation conducted under room temperature during two hours and measurement was repeated after irradiation