Observation of terahertz second harmonic generation from Dirac surface states in the topological insulator
Creators
- 1. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, U.S.A.
- 2. Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, New Jersey 08854, U.S.A.
Description
We report the observation of second harmonic generation with high conversion efficiency in the terahertz regime from thin films of the topological insulator that exhibits the linear photogalvanic effect, measured via time-domain terahertz nonlinear spectroscopy and terahertz emission, respectively. As neither phenomena is observable from topologically trivial In-doped , and since no enhancement is observed when subject to band bending, the efficient thickness-independent nonliear responses are attributable to the Dirac fermions of topological surface states of . This observation of intrinsic terahertz second harmonic generation in an equilibrium system unlocks the full suite of both even and odd harmonic orders in the terahertz regime and opens new pathways to probing quantum geometry via intraband second-order nonlinear processes. We hope our work will motivate the theoretical development of a full treatment of second harmonic generation for probing the quantum geometry in various inversion-breaking topological and twisted materials.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.245112;
- arXiv
- arXiv:2301.05271;
- Crossref Funder ID
- 10.13039/100000183; 10.13039/100000936; 10.13039/100006920; 10.13039/100000001; 10.13039/100000181;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 24
- Journal Page Range
- 9 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BENDING; BISMUTH SELENIDES; CONVERSION; DOPED MATERIALS; EMISSION; EQUILIBRIUM; FERMIONS; GEOMETRY; HARMONICS; NONLINEAR PROBLEMS; PROBES; SPECTROSCOPY; SURFACES; THICKNESS; THIN FILMS; TOPOLOGY
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; DEFORMATION; DIMENSIONS; FILMS; MATERIALS; MATHEMATICS; OSCILLATIONS; SELENIDES; SELENIUM COMPOUNDS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- W911NF-19-1-0342; W911NF-20-2-0166; GBMF9212; GBMF10104; DMR-2213891; FA955022-1-0410
- Notes
- Contact Email: liangwu@sas.upenn.edu; Record automatically processed
- Funding organization
- Army Research Office; Gordon and Betty Moore Foundation; University of Pennsylvania; National Science Foundation; Air Force Office of Scientific Research