Published 1987 | Version v1
Miscellaneous Metadata-only

Implantation and thermal annealing behaviour of Bi implanted into Al/ti and A1/V bilayer structures

Creators

  • 1. Rio Grande do Sul Univ., Porto Alegre (Brazil). Inst. de Fisica
  • 2. Sao Carlos Univ. (Brazil)
  • 3. Hahn-Meitner-Institut fuer Kernforschung Berlin G.m.b.H. (Germany, F.R.)

Description

Published in summary form only

Additional details

Publishing Information

Imprint Title
Progress Report 1985-1986
Imprint Pagination
180 p.
Journal Page Range
p. 20.
Report number
INIS-BR--1229

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
19081838
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Progress Report, No Abstract
Descriptors DEI
ALUMINIUM; ANNEALING; BISMUTH IONS; DEPTH; HIGH TEMPERATURE; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; LAYERS; PROGRESS REPORT; SPATIAL DISTRIBUTION; TITANIUM; VANADIUM
Descriptors DEC
ATOMIC IONS; BEAMS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; METALS; TRANSITION ELEMENTS