Published 1973
| Version v1
Book
Electrical and optical properties of InAs and InP compounds and their solid solutions of InPsub(x)Assub(1-x) irradiated with fast neutrons and γ rays
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- London
- ISBN
- 0854981063
- Imprint Title
- Radiation damage and defects in semiconductors
- Imprint Pagination
- p. 387-393.
- Journal Issue
- no. 16
- Series
- Conference series.
Conference
- Title
- International conference on radiation damage and defects in semiconductors.
- Dates
- 19 Jul 1972.
- Place
- Reading, UK.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4066699
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; ARSENIDES; CARRIER DENSITY; CARRIER MOBILITY; CRYSTAL DEFECTS; FAST NEUTRONS; GAMMA RADIATION; INDIUM COMPOUNDS; IRRADIATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; NEUTRON BEAMS; OPTICAL PROPERTIES; PHOSPHIDES; PHOTON BEAMS; RADIATION DOSES; RADIATION EFFECTS; REFLECTION; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
- Descriptors DEC
- BARYONS; BEAMS; CRYSTAL STRUCTURE; DISPERSIONS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; HADRONS; MIXTURES; MOBILITY; NEUTRONS; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SOLUTIONS; SPECTRA