Published December 2008
| Version v1
Journal article
Effect of impurity on electronic properties of carbon nano tubes
Creators
- 1. Khajeh Nasir Toosi University, Faculty of Science, Tehran (Iran, Islamic Republic of)
- 2. Khajeh Nasir Toosi University of Technology, Nanosciences Research Center, Tehran (Iran, Islamic Republic of)
Description
We have studied the effect of impurity on electronic properties of single-walled carbon nano tubes using Density Functional Theory. Electronic band structures and density of states of (4, 4) and (7, 0) carbon nano tubes in the presence of different amount of B and N impurities were calculated. It was found that these impurities have significant effect on the conductivity of carbon nano tubes. The metallic (4, 4) nano tube remains to be metallic after doping with B and N. The electronic properties of small gap semiconducting (7, 0) tube can extensively change in the presence of impurity. Our results indicate that B-doped and N-doped (7, 0) carbon nano tubes can be p-type and n-type semiconductors, respectively
Availability note (English)
Available from Atomic Energy Organization of IranAdditional details
Publishing Information
- Journal Title
- Journal of the Iranian Chemical Society (Print)
- Journal Volume
- 5
- Journal Issue
- no.4
- Journal Page Range
- p. 641-645
- ISSN
- 1735-207X
INIS
- Country of Publication
- Iran, Islamic Republic of
- Country of Input or Organization
- Iran, Islamic Republic of
- INIS RN
- 40052360
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; BORON; CARBON; DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; FERMI LEVEL; IMPURITIES; NANOTUBES; NITROGEN; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CALCULATION METHODS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY LEVELS; MATERIALS; NANOSTRUCTURES; NONMETALS; PHYSICAL PROPERTIES; SEMIMETALS; VARIATIONAL METHODS