Published December 2008 | Version v1
Journal article

Effect of impurity on electronic properties of carbon nano tubes

  • 1. Khajeh Nasir Toosi University, Faculty of Science, Tehran (Iran, Islamic Republic of)
  • 2. Khajeh Nasir Toosi University of Technology, Nanosciences Research Center, Tehran (Iran, Islamic Republic of)

Description

We have studied the effect of impurity on electronic properties of single-walled carbon nano tubes using Density Functional Theory. Electronic band structures and density of states of (4, 4) and (7, 0) carbon nano tubes in the presence of different amount of B and N impurities were calculated. It was found that these impurities have significant effect on the conductivity of carbon nano tubes. The metallic (4, 4) nano tube remains to be metallic after doping with B and N. The electronic properties of small gap semiconducting (7, 0) tube can extensively change in the presence of impurity. Our results indicate that B-doped and N-doped (7, 0) carbon nano tubes can be p-type and n-type semiconductors, respectively

Availability note (English)

Available from Atomic Energy Organization of Iran

Additional details

Publishing Information

Journal Title
Journal of the Iranian Chemical Society (Print)
Journal Volume
5
Journal Issue
no.4
Journal Page Range
p. 641-645
ISSN
1735-207X