Beyond muffin-tin model for theoretical analysis of As K-edge XANES of InAs

Three alternative approaches have been applied to calculate As K-edge XANES of InAs: multiple scattering (MS) theory, non-muffin-tin finite difference method (FDM) and full potential linearized augmented plane wave (FLAPW) method. Such combination allows to make the distinction between two types of non-muffin-tin effects. First, in the interstitial region the potential is not constant. Second, the covalent bonds increase the charge density between nearest atoms and lead to additional loss of spherical symmetry of the potential within MT spheres