Published October 29, 2014
| Version v1
Journal article
Thermal effects on the switching kinetics of silver/manganite memristive systems
- 1. ECyT, UNSAM, 1650 San Martín (Argentina)
- 2. Centro Atómico Bariloche and Instituto Balseiro, CNEA, 8400 Bariloche, Río Negro (Argentina)
- 3. Instituto Tecnológico de Buenos Aires (ITBA), C1106ACD Buenos Aires (Argentina)
- 4. Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), C1033AAJ Buenos Aires (Argentina)
Description
We investigate the switching kinetics of oxygen vacancy (Ov) diffusion in La(5/8-y)Pr(y)Ca(3/8)MnO(3)-Ag (LPCMO–Ag) memristive interfaces by performing experiments on the temperature dependence of the high resistance state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite-based cells. The confident values obtained for activation energies and the diffusion coefficient associated to Ov dynamics constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/47/43/435304Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 47
- Journal Issue
- 43
- Journal Page Range
- [5 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46052997
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ACTIVATION ENERGY; COMPUTERIZED SIMULATION; DIFFUSION; INTERFACES; KINETICS; MANGANESE OXIDES; OXYGEN; SILVER; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY; MANGANESE COMPOUNDS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; SIMULATION; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS