Published March 2022 | Version v1
Journal article

Hydrothermal growth of Sb2S3 thin films on molybdenum for solar cell applications: Effect of post-deposition annealing

  • 1. Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186 (Korea, Republic of)

Description

Highlights: • Solution-processed (hydrothermal) growth of Sb2S3 on Mo substrate. • Assessment of structural and morphological evolution of Sb2S3 growth via annealing. • Fabrication of substrate architecture Sb2S3 solar cell devices. • A power conversion efficiency of ~1.0% was achieved for optimized device. -- Abstract: The binary chalcogenide material antimony sulfide (Sb2S3) has attracted significant attention as a potential absorber material for photovoltaics (PVs) owing to its suitable bandgap of ~1.7 eV and other unique properties. However, only a few substrate-configured Sb2S3 thin-film solar cells (TFSCs) have been reported, and they demonstrated an extremely low power conversion efficiency (PCE, η < 2.5%) owing to the unfavorable (hk0) orientation of Sb2S3. In most studies, Sb2S3 absorber layers were grown through physical vapor deposition or high-vacuum methods. By contrast, we used a facile hydrothermal approach to deposit Sb2S3 thin films on molybdenum and investigated the effect of post-deposition annealing on the structure, orientation, and morphology of Sb2S3 thin films. Annealing at temperatures ranging from 0° to 350°C transformed the Sb2S3 thin films from nearly amorphous to polycrystalline with large, horizontally aligned plate-like grains. All the annealed Sb2S3 thin films were confirmed to have a preferred orientation along the (hk0) crystal direction. The fabricated substrate-configured TFSCs with SLG/Mo/Sb2S3/CdS/i-ZnO/Al-doped ZnO/Al configuration exhibited the highest PCE of ~1.0%. Further, over 95% of this initial efficiency was maintained after 90 days. We also addressed the underlying reasons for the low efficiency of Sb2S3 TFSCs to provide a pathway for improving the device performance in the future.

Additional details

Identifiers

DOI
10.1016/j.jallcom.2021.162891;
PII
S0925838821043012;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
898
Journal Page Range
vp.
ISSN
0925-8388
CODEN
JALCEU

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Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.