Published April 2003 | Version v1
Journal article Metadata-only

Effect of irradiation with low-energy Ar ions on the characteristics of the working and rear sides of single-crystal GaAs substrate

Creators

  • 1. Udmurt State University, Krasnoarmeiskaya ul. 71, Izhevsk, 426034 (Russian Federation)
  • 2. Nizhni Novgorod State Technical University, ul. Minina 24, Nizhni Novgorod, 603024 (Russian Federation)

Description

Contactless methods were used to study the characteristics of the front and rear sides of single-crystal GaAs wafers whose rear side was irradiated with low-energy Ar ions. Variations in the optical and photoelectric properties of irradiated and unirradiated sides were detected. A solitonic mechanism for the penetration of defects into the crystal bulk is suggested

Additional details

Identifiers

DOI
10.1134/1.1568466;

Publishing Information

Journal Title
Semiconductors
Journal Volume
37
Journal Issue
4
Journal Page Range
p. 448-451
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35052818
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ARGON IONS; CRYSTAL DEFECTS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; ION BEAMS; IONS; MONOCRYSTALS; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INFORMATION; IONS; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 37, 465-468 (No. 4, 2003); (c) 2003 MAIK ''Nauka / Interperiodica''.