Influence of geometrical and electrical parameters of masking layers on the electrochemical etching of silicon for single trench formation

Deep single trenches can be produced at the edge of apertures of protective films masking the surface of silicon samples. This macropore formation, from polarized HF based solutions, is electrically activated depending on the mask geometrical and physical parameters whatever the silicon type or the electrolyte composition. The mask thickness increase is known to induce deeper trenches. In this paper, we show that we can predict and localize this phenomenon by simulating two dimensional hole current distributions below the mask. We demonstrate also the influence of the material permittivity on trench depth. These 2D simulation results are correlated with experimental results