Published May 12, 2008
| Version v1
Journal article
Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs
- 1. Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)
Description
Heavily alloyed, 100 nm Ga1-xMnxAs (x>0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x>0.1), while substitutional Mn content is proportional to x within a large window of growth conditions
Additional details
Identifiers
- DOI
- 10.1063/1.2927481;
- arXiv
- arXiv:0803.3245v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 92
- Journal Issue
- 19
- Journal Page Range
- p. 192502-192502.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39112251
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARSENIC; CRYSTAL GROWTH; CURIE POINT; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ARSENIDES; MAGNETIC SEMICONDUCTORS; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; STOICHIOMETRY; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; MAGNETIC MATERIALS; MAGNETISM; MANGANESE COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; SEMIMETALS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE
Optional Information
- Notes
- (c) 2008 American Institute of Physics