Published May 12, 2003 | Version v1
Journal article Metadata-only

Growth and characterization of sputtered epitaxial γ'Fe4N and NbN films and bilayers using electron backscatter diffraction patterns and magnetometry

Creators

  • 1. Department of Physics and Astronomy, Center for Sensor Materials, and Center for Fundamental Material Research, Michigan State University, East Lansing, Michigan 48824 (United States)

Description

Epitaxial single-crystal ferromagnetic Fe4N films (γ' phase of iron nitride), nonmagnetic NbN films, and NbN/Fe4N bilayers were grown on MgO(100) substrates by sputter deposition in N2 gas. Electron backscatter diffraction patterns were used to characterize the structural properties including the relative crystallographic orientation of the sputter deposited Fe4N and NbN films with respect to the substrate and each other. Superconducting quantum interference device magnetometry was used to study the in-plane uniaxial anisotropy and determine the directions of the easy axes in ferromagnetic Fe4N films

Additional details

Identifiers

DOI
10.1063/1.1573356;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
82
Journal Issue
19
Journal Page Range
p. 3281-3283
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35037692
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANISOTROPY; BACKSCATTERING; CRYSTAL STRUCTURE; DEPOSITION; ELECTRON DIFFRACTION; EPITAXY; FERROMAGNETIC MATERIALS; INTERFACES; IRON NITRIDES; LAYERS; MAGNETIC PROPERTIES; MAGNETOMETERS; NIOBIUM NITRIDES; ORIENTATION; SPUTTERING; THIN FILMS
Descriptors DEC
COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; MEASURING INSTRUMENTS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SCATTERING; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2003 American Institute of Physics.