Published May 1996
| Version v1
Journal article
Field emission from ZrC films on Si and Mo single emitters and emitter arrays
Creators
- 1. Linfield Research Institute, McMinnville, Oregon 97128-6894 (United States)
Description
Field emission from ZrC films deposited on Si and Mo single emitters and field emitter arrays (FEAs) has been studied. For single emitters, the results show dramatic improvements in emitter performance by reducing work functions emdash on the order of 1 eV emdash and increasing stability. For FEAs, deposition of a ZrC film reduced the operating voltage 30%endash 50% at an emission current of 1.0 μA/tip and increased the emission stability. copyright 1996 American Vacuum Society
Additional details
Additional titles
- Augmented title (English)
- ZrC; Si; MO; W
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Journal Volume
- 14
- Journal Issue
- 3
- Journal Page Range
- p. 2090-2092.
- ISSN
- 0734-211X
- CODEN
- JVTBD9
Conference
- Title
- 8. international vacuum microelectronics conference.
- Dates
- 30 Jul - 3 Aug 1995.
- Place
- Portland, OR (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27074238
- Subject category
- S36: MATERIALS SCIENCE; S43: PARTICLE ACCELERATORS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CATHODES; ELECTRON EMISSION; FIELD EMISSION; MICROELECTRONICS; MOLYBDENUM; SILICON; SURFACE COATING; TUNGSTEN; WORK FUNCTIONS; ZIRCONIUM CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; DEPOSITION; ELECTRODES; ELEMENTS; EMISSION; METALS; SEMIMETALS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; ZIRCONIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-9507110--.