Published May 24, 2019 | Version v1
Journal article

Au-catalyzed desorption of GaAs oxides

  • 1. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330 (Thailand)
  • 2. Synchrotron Light Research Institute (Public Organization), Ministry of Science and Technology, Nakhon Ratchasima 30000 (Thailand)

Description

Thermal desorption of native oxides on GaAs(100), (110) and (111)B surfaces around Au particles are studied in vacuum using in situ microspectroscopy. Two temperature-dependent desorption regimes, common to all surfaces, are identified. The low-temperature desorption regime spatially limited to the vicinity of some Au nanoparticles (NPs) is catalytically enhanced, resulting in oxide pinholes which expand laterally into macro holes many times the size of the catalyzing NPs and with shapes dictated by the underlying crystallography. The high-temperature desorption regime causes homogeneous oxides thinning and, ultimately, complete oxide desorption. The temperature difference between the two regimes is ∼25 °C–60 °C. After oxide desorption and depending on Au size and GaAs surface orientation, Au particles may dissolve the fresh GaAs surface and form mobile AuGa2/Ga core/shell units, or form stationary AuGa2 crystallites, or the catalyzing Au particles may run with minimal reaction with the GaAs surface. These results will add to the fundamental understanding of many Au-based nanofabrication processes, particularly the epitaxial growth of vertical and lateral nanowires. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/ab062e

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
30
Journal Issue
21
Journal Page Range
[12 p.]
ISSN
0957-4484