Au-catalyzed desorption of GaAs oxides
- 1. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330 (Thailand)
- 2. Synchrotron Light Research Institute (Public Organization), Ministry of Science and Technology, Nakhon Ratchasima 30000 (Thailand)
Description
Thermal desorption of native oxides on GaAs(100), (110) and (111)B surfaces around Au particles are studied in vacuum using in situ microspectroscopy. Two temperature-dependent desorption regimes, common to all surfaces, are identified. The low-temperature desorption regime spatially limited to the vicinity of some Au nanoparticles (NPs) is catalytically enhanced, resulting in oxide pinholes which expand laterally into macro holes many times the size of the catalyzing NPs and with shapes dictated by the underlying crystallography. The high-temperature desorption regime causes homogeneous oxides thinning and, ultimately, complete oxide desorption. The temperature difference between the two regimes is ∼25 °C–60 °C. After oxide desorption and depending on Au size and GaAs surface orientation, Au particles may dissolve the fresh GaAs surface and form mobile AuGa2/Ga core/shell units, or form stationary AuGa2 crystallites, or the catalyzing Au particles may run with minimal reaction with the GaAs surface. These results will add to the fundamental understanding of many Au-based nanofabrication processes, particularly the epitaxial growth of vertical and lateral nanowires. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/ab062eAdditional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 30
- Journal Issue
- 21
- Journal Page Range
- [12 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51047297
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CRYSTALLOGRAPHY; DESORPTION; EPITAXY; FABRICATION; GALLIUM ARSENIDES; GOLD; GRAIN ORIENTATION; NANOPARTICLES; NANOWIRES; OXIDES; SHAPE; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; GALLIUM COMPOUNDS; METALS; MICROSTRUCTURE; NANOSTRUCTURES; ORIENTATION; OXYGEN COMPOUNDS; PARTICLES; PNICTIDES; SORPTION; TEMPERATURE RANGE; TRANSITION ELEMENTS