Published 1995 | Version v1
Miscellaneous Open

Implant isolation in n-type InP implanted with low and high energy He+ and B+

  • 1. McMaster Univ., Hamilton, ON (Canada)

Description

Short communication

Files

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Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 10073.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28072878
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
BORON IONS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; HELIUM IONS; INDIUM PHOSPHIDES; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY RANGE; INDIUM COMPOUNDS; IONS; KEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS

Optional Information