Published August 22, 2005
| Version v1
Journal article
Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
Creators
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
Description
Self-assembled InAs quantum wires (QWRs) on InP(001) substrate have been grown by molecular-beam epitaxy, using a strain compensating technique. Atom force microscope, Transmission electron microscopy, and high-resolution x-ray diffraction are used to characterize their structural properties. We proposed that, by carefully adjusting composition of InAlGaAs buffer layer and strain compensating spacer layers, stacked QWRs with high uniformity could be achieved. In addition, the formation mechanism and vertical anti-correlation of QWRs are also discussed
Additional details
Identifiers
- DOI
- 10.1063/1.2034118;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 8
- Journal Page Range
- p. 083108-083108.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37024079
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ATOMIC FORCE MICROSCOPY; BUFFERS; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; STRAINS; STRESSES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2005 American Institute of Physics