Development of eco-friendly thin film manufacturing process using poeroxo titanium complex solution and potential for resistive random access memory

Highlights: • The TiN/TiO₂/FTO RRAM was investigated through a green solution-based process. • The PTC-sol shows excellent adhesion properties on the substrate. • The presence of Ti³⁺ bond and V_o affect resistive switching characteristics. • The TiN/TiO₂/FTO memristor is activated by the oxygen vacancy conducting filaments. • The current is limited to the space charge limited current (SCLC) mechanism. Here we report on the development of thin film manufacturing processes based on new and sustainable green solutions. We focused on utilizing green based surface solutions. The peroxo titanium complex (PTC) solution-based thin film fabrication method used does not require additional heat treatment and complex processes to remove organic matter. Conditions suitable for thin film fabrication were derived through optimization of precursor concentration and reaction temperature. As a result of I-V test of TiN/TiO₂/FTO samples fabricated by applying this technology, it has been proven that it can operate as a resistive random-access memory (RRAM). The measured I-V curve suggests that TiN/TiO₂/FTO RRAM exhibits bipolar resistive switching (RS) characteristics through the formation of oxygen vacancy (V_o) filament conduction paths. We also used the double logarithmic plot analysis to confirm that the dominant conduction mechanism of the device is the space charge limited conduction (SCLC) model.