Published 1997
| Version v1
Miscellaneous
Open
Structuring of silicon with low energy focused ion beams
Creators
- 1. Paul Scherrer Inst. (PSI), Villigen (Switzerland)
- 2. Eidgenoessische Technische Hochschule, Zurich (Switzerland)
Description
The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs
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28056547.pdf
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Additional details
Publishing Information
- Publisher
- Paul Scherrer Institut.
- Imprint Place
- Villigen PSI (Switzerland)
- Imprint Title
- Paul Scherrer Institut annual report 1996. Annex IIIA: solid state research at large facilities
- Imprint Pagination
- 180 p.
- Journal Page Range
- p. 47.
- Report number
- INIS-CH--004
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- Switzerland
- INIS RN
- 28056547
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CRYSTAL DEFECTS; EXPERIMENTAL DATA; FABRICATION; GALLIUM; GOLD; ION BEAMS; IRRADIATION; PRASEODYMIUM; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; DATA; ELEMENTS; INFORMATION; MATERIALS; METALS; NUMERICAL DATA; RARE EARTHS; SEMIMETALS; TRANSITION ELEMENTS