Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities

By analyzing time-resolved and steady-state photoluminescence spectra, it is established that the spatial distribution of rare-earth ion dopants in wurtzite GaN crystals doped with Sm, Eu, Er, or Tm is governed by the type and concentration of defects in the initial semiconductor matrix as well as by the type of the impurity (its capacity for segregation). Doping with multicharged rare-earth impurities and additionally introduced Zn impurity leads to an intensification of emission. The effect of intensification of emission in the case of n-and p-GaN crystals is considered with the use of the model of isoelectronic traps.