Published June 2002
| Version v1
Journal article
Preparation of high-quality poly-Si films by a solid phase crystallizing method
Creators
- 1. Chinese Academy of Sciences, Hefei (China). Inst. of Plasma Physics
Description
A solid phase crystallizing method has been developed to grow a Si crystal at temperatures as low as 550 degree C. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 μm for substrate temperature at 300 degree C and annealed at 550 degree C for 3 hours
Additional details
Publishing Information
- Journal Title
- Plasma Science and Technology
- Journal Volume
- 4
- Journal Issue
- 3
- Journal Page Range
- p. 1319-1322
- ISSN
- 1009-0630
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 34032682
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH METHODS; CRYSTALLIZATION; FILMS; GRAIN SIZE; PLASMA; POLYCRYSTALS; SAMPLE PREPARATION; SCANNING ELECTRON MICROSCOPY; SILANES; SILICON; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION
- Descriptors DEC
- CHEMICAL COATING; COHERENT SCATTERING; CRYSTALS; DEPOSITION; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; HYDRIDES; HYDROGEN COMPOUNDS; MICROSCOPY; MICROSTRUCTURE; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHASE TRANSFORMATIONS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SIZE; SURFACE COATING