Published March 2016 | Version v1
Journal article Metadata-only

Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

Creators

  • 1. Department of Information and Engineering, North China University of WaterResources and Electric Power, Zhengzhou 450046 (China)
  • 2. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education,School of Microelectronics, Xidian University, Xi'an 710071 (China)
  • 3. Department of Mathematics and Information Science, North China University ofWater Resources and Electric Power, Zhengzhou 450046 (China)

Description

The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal–oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field expressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/25/3/038502

Additional details

Identifiers

DOI
10.1088/1674-1056/25/3/038502;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
25
Journal Issue
3
Journal Page Range
[5 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47094587
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ANALYTICAL SOLUTION; COMPUTERIZED SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; METALS; MOSFET; OXIDES; POISSON EQUATION; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SURFACE POTENTIAL; SURFACES; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
CHALCOGENIDES; DIFFERENTIAL EQUATIONS; ELEMENTS; EQUATIONS; FIELD EFFECT TRANSISTORS; MATERIALS; MATHEMATICAL SOLUTIONS; MOS TRANSISTORS; OXYGEN COMPOUNDS; PARTIAL DIFFERENTIAL EQUATIONS; POTENTIALS; SEMICONDUCTOR DEVICES; SEMIMETALS; SIMULATION; TRANSISTORS