Transport properties of MnTe films with cracks produced in thermal cycling process

As a promising material in antiferromagnetic spintronics, MnTe films manifested complex characteristics according to previous reports. In this work, we investigate in details the temperature dependence of resistivity of MnTe films grown on SiO₂/Si substrate and focus on the divaricating of cooling and warming resistivity-temperature (R-T) curves. It is found that such a divaricating in resistivity is associated with cracks produced in thermal cycles. By comparing the crystalline character and the morphology before and after the cycles, we verify the appearance of cracks and the release of stress in the films. Based on the temperature dependence of thermal-expansion coefficient of Si and MnTe, the origin of the cracks is the mismatched thermal-expansion coefficient (α). The humps, which only appear in the R-T curve of the first cooling process, are attributed to the produced cracks and/or the unreleased stress. (orig.)