Published October 23, 1989
| Version v1
Journal article
Damage-induced high-resistivity regions in Al0.48In0.52As
- 1. AT ampersand T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)
Description
The sheet resistivity of oxygen-implanted n+-Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post-implant annealing temperature. The sheet resistivity is >105 Ω/D'Alembertian after implantation for doses in the range 1012--8x1013 cm-2, and increases to >107 Ω/D'Alembertian after annealing at 500 degree C. Temperature-dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 degree C the damage-related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen-related deep acceptors in AlInAs, in contrast to the results for AlGaAs
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 55
- Journal Issue
- 17
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 1786-1788
- ISSN
- 0003-6951
- CODEN
- APPLA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21027191
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALUMINIUM ARSENIDES; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; HALL EFFECT; INDIUM ARSENIDES; ION IMPLANTATION; OXYGEN IONS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS