UV-Vis spectroscopy of Mn-doped ZnO thin films prepared by pulsed laser deposition
Creators
- 1. Plasma, Láser y aplicaciones, Universidad Tecnológica de Pereira, Risaralda, Colombia. (Colombia)
- 2. Grupo QCOAMMS, Programa de Química Industrial, Universidad Tecnológica de Pereira, Risaralda, Colombia. (Colombia)
Description
Mn-doped zinc oxide (ZnMnO) is of increasing interest to the optoelectronic community for thin film sensors, transistors and solar cells applications. Considerable variability exists in the literature on the growth and doping of ZnMnO films, especially as a function of growth approach, temperature, and oxygen partial pressure. We fabricated ZnMnO thin films on silicon substrates by pulsed laser deposition (PLD). The deposition pressure and the substrate temperature were varied from 2.67 Pa to 26.67 Pa, and from room temperature to 600 °C, respectively. The targets were fabricated with a nominal composition of 1, 5, 10, 15 and 20 wt.% Mn. The influence of the Mn composition, deposition pressure and the substrate temperature on optical properties of the ZnO films was investigated using ultraviolet– visible (UV–Vis) spectrometry. The optical band-gap of the films was evaluated in terms of the Kubelka-Munk function. The results show that the oxygen gas pressure has slightly affected the optical band-gap of the deposited films. Furthermore, the substrate temperature play significant role in the optical properties of the deposited ZnMnO thin films. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1247/1/012029Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1247
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 6. National Conference on Engineering Physics; 1. International Conference on Applied Physics Engineering and Innovation
- Dates
- 22-26 Oct 2018
- Place
- Bucaramanga (Colombia)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53055927
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOPED MATERIALS; ENERGY BEAM DEPOSITION; LASER RADIATION; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; PULSED IRRADIATION; SENSORS; SILICON; SOLAR CELLS; SPECTROSCOPY; SUBSTRATES; THIN FILMS; TRANSISTORS; ULTRAVIOLET RADIATION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; DEPOSITION; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; FILMS; IRRADIATION; MATERIALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SOLAR EQUIPMENT; SURFACE COATING; THERMODYNAMIC PROPERTIES; ZINC COMPOUNDS