Charged particle activation analysis of semiconductor materials

We have continued charged particle activation analysis for light impurity elements in semiconductor materials for many years. The following four recent studies of oxygen analysis by activation with the 16O(3He,p)18F reaction are reported here: (1) determination of as low as a few ppb of oxygen in GaAs produced under various conditions; (2) nondestructive analysis of oxygen in Sb-doped silicon, to indicate an oxygen escape as antimony oxide in the crystal growth; (3) surface oxygen analysis under various atmospheric conditions (not in high vacuum); and (4) studies on the relationship between IR absorption and composition of evaporated silicon oxide films. (author)