Published November 15, 1974
| Version v1
Journal article
Room-temperature heterojunction laser diodes from vapor-grown In/sub 1-x/Ga/sub x/P/GaAs structures
Description
Vapor-grown epitaxial structures of In0.5Ga0.5P/GaAs have yielded heterojunction laser diodes with room-temperature threshold current densities as low as 8000 A/cm2 for a 2.5-μm GaAs laser cavity width. Differential external quantum efficiencies as high as 30% have been attained. Measurements suggest the existence of internally ``trapped'' laser modes due to the large refractive-index discontinuity at the In0.5Ga0.5P–GaAs interfaces.
Additional details
Identifiers
- DOI
- 10.1063/1.1655331;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 25
- Journal Issue
- 10
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 612-614
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6185418
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- CRYSTAL GROWTH; EPITAXY; FABRICATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; PERFORMANCE; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR LASERS
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent