Restoration structure kinetics and interstitials activation in ion-implanted silicon layers under intensive ion beam effect

Kinetics of second ion radiation annealing (IRA) implanted with B+, 31p+, 40Ar+ ions in silison layers under the action of intensive 31P+, 40Ar+, BF2+ ion beams on the opposite side of silicon plates with 400μm in thick was investigated by the method of the Rutherford backscattering and by measuring of layer resistance and volt-Faraday characteristics in combination with layer-by-layer etching. The temperature of specimens during IRA process is calculated by means of the known equation of thermal conductivity it is measured just in the process on the front side of plates using IR-sensor and varies from 600 to 1000 deg C. The investigations carried out have shown that silicon layers implanted with high doses (1015-1016 cm-2) agter IRA have the uniform crystal structure and practically all implanted impurity is in nodal positions. 1 fig