Auger Recombination and Amplified Luminescence in InAsSb/InAsSbP Leds at 10–60 K

The Varshni parameters of the temperature dependence of the bandgap energy in the range 10–313 K and the temperature dependence of the spin–orbit splitting energy have been calculated using experimental data obtained for an InAs_0.88Sb_0.12 active layer. Amplified luminescence was observed in the range 10–35 K for LEDs based on InAs_0.88Sb_0.12/InAsSbP heterostructures. The sharp drop in radiation intensity of InAsSb/InAsSbP LEDs at temperatures >32 K was due to extensive growth of the CHCC Auger-recombination process while the CHSH process was the dominant Auger-recombination process at temperatures <35 K.