Published October 1990
| Version v1
Journal article
Depth-dissection of Si-SiO2 irradiated with 60Co by electron spectroscopy
Creators
- 1. Academia Sinica, Xinjiang, XJ (China). Inst. of Physics
Description
The Si-SiO2 irradiated with 60Co are analyzed by using the depth-dissection techniques of XPS and AES. The results show that there exists an interface and that when the sample is irradiated the interface extends towards the surface of SiO2 and the centre of the interface moves towards the surface of SiO2. The extension and movement are dependent on the condition of irradiation. An explanation for the experimental results is given using the Bond Strain Gradient Model
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 13
- Journal Issue
- 10
- Series
- Nucl. Tech.
- Journal Page Range
- 589-593
- ISSN
- 0253-3219
- CODEN
- NUTED
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 22039815
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; COBALT 60; DEPTH; ELECTRIC FIELDS; ETCHING; INTERFACES; IONIZING RADIATIONS; IRRADIATION; PHOTOELECTRON SPECTROSCOPY; RADIATION DOSES; SILICON; SILICON OXIDES; STRUCTURAL CHEMICAL ANALYSIS
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHALCOGENIDES; COBALT ISOTOPES; DIMENSIONS; ELECTRON SPECTROSCOPY; ELEMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; MINUTES LIVING RADIOISOTOPES; NUCLEI; ODD-ODD NUCLEI; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; RADIOISOTOPES; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; YEARS LIVING RADIOISOTOPES