A structure modeling of metal-silicide layers by using axial and planar channeling techniques

Planar channeling effects are studied in such well-oriented polycrystalline layers as NiSi2 and Pb2Si layers formed on single crystalline Si. Crystalline perfection of such layers is discussed by using the energy- and angular dependences of the axial and planar channeling yields. It has been shown that, in suitable conditions, the energy dependence of the planar yield is more sensitive to the spread of crystallite orientations in polycrystals than that of the axial one. (Auth.)