Published March 31, 2014 | Version v1
Journal article

Persistent conductive footprints of 109° domain walls in bismuth ferrite films

  • 1. Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015 (Switzerland)
  • 2. DPMC-MaNEP, University of Geneva, 24 Quai Ernest Ansermet, 1211 Geneva 4 (Switzerland)
  • 3. Faculty of Science and Technology and MESA Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

Description

Using conductive and piezoforce microscopy, we reveal a complex picture of electronic transport at weakly conductive 109° domain walls in bismuth ferrite films. Even once initial ferroelectric stripe domains are changed/erased, persistent conductive paths signal the original domain wall position. The conduction at such domain wall "footprints" is activated by domain movement and decays rapidly with time, but can be re-activated by opposite polarity voltage. The observed phenomena represent true leakage conduction rather than merely displacement currents. We propose a scenario of hopping transport in combination with thermionic injection over interfacial barriers controlled by the ferroelectric polarization

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
13
Journal Page Range
p. 132902-132902.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45082857
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BISMUTH; ELECTRIC CONDUCTIVITY; FERRITE; FERROELECTRIC MATERIALS; FILMS; THERMIONICS
Descriptors DEC
ALLOYS; CARBON ADDITIONS; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; ELEMENTS; IRON ALLOYS; MATERIALS; METALS; PHYSICAL PROPERTIES; TRANSITION ELEMENT ALLOYS

Optional Information

Notes
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