Ion implantation, annealing, characterization and device development in beta-silicon-carbide single crystalline thin films

A major portion of the as-received, implanted, and annealed SiC samples were chemically, physically, microstructurally, and electrically characterized using SIMS, XTEM, Raman spectrometry, and electrical-measurement techniques. Additional studies were conducted in the development and fabrication of ohmic contacts for both n- and p-type beta-SiC. Finally, Schottky diodes, implanted p-n junctions, and MESFETs in in beta-SiC thin films were fabricated and characterized via I-V and C-V measurements. Interface rise and interface dip phenomena in the charge-carrier concentration were observed in the Al-doped p-type and undoped n-type SiC, respectively. Values of the ionization energy for the N, Al, and B in the beta-SiC crystal were determined to be 42, 270, and 410 meV, respectively. A high-resistivity layer was produced by ion implantation of B into n-type SiC. However, the p-type conduction was not observed. No precipitates or defect structure was observed in N-implanted and annealed samples. The values of the diode constants n and Is for Au/beta-Sic Scottky diodes were typically 2.5 and 1.9x10-9A/cm2, respectively